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onsemi MUN5312DW1T2G — Discrete Semiconductors

onsemi MUN5312DW1T2G

MPNMUN5312DW1T2G
Active
$0.0437Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

MUN5312DW1T2G specifications
ParameterValue
MountingSurface Mount
FET type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce60 @ 5mA, 10V
Power - max385mW
PackageTape & Reel (TR)
Case6-TSSOP, SC-88, SOT-363
Resistor - base (R1)22kOhms
Resistor - emitter base (R2)22kOhms
Vce saturation (Max) @ ib, ic250mV @ 300µA, 10mA