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onsemi MUN5214DW1T1G — Discrete Semiconductors

onsemi MUN5214DW1T1G

MPNMUN5214DW1T1G
Active

TRANS 2NPN PREBIAS 0.25W SOT363

$0.2800Ref. price · indicative, final on quote
Packaging6-TSSOP, SC-88, SOT-363
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

MUN5214DW1T1G specifications
ParameterValue
MountingSurface Mount
FET type2 NPN - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce80 @ 5mA, 10V
Power - max250mW
PackageTape & Reel (TR); Cut Tape (CT)
Case6-TSSOP, SC-88, SOT-363
Resistor - base (R1)10kOhms
Resistor - emitter base (R2)47kOhms
Vce saturation (Max) @ ib, ic250mV @ 300µA, 10mA