Skip to main content
onsemi MUN5132DW1T1G — Discrete Semiconductors

onsemi MUN5132DW1T1G

MPNMUN5132DW1T1G
Active
$0.0300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

MUN5132DW1T1G specifications
ParameterValue
MountingSurface Mount
FET type2 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce15 @ 5mA, 10V
Power - max250mW
PackageTape & Reel (TR)
Case6-TSSOP, SC-88, SOT-363
Resistor - base (R1)4.7kOhms
Resistor - emitter base (R2)4.7kOhms
Vce saturation (Max) @ ib, ic250mV @ 1mA, 10mA