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onsemi MUN5113T1 — Discrete Semiconductors

onsemi MUN5113T1

MPNMUN5113T1
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

MUN5113T1 specifications
ParameterValue
MountingSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce80 @ 5mA, 10V
Power - max202 mW
PackageTape & Reel (TR)
CaseSC-70, SOT-323
Resistor - base (R1)47 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic250mV @ 300µA, 10mA