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onsemi MUN2212T1 — Discrete Semiconductors

onsemi MUN2212T1

MPNMUN2212T1
Obsolete
$0.0500Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

MUN2212T1 specifications
ParameterValue
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce60 @ 5mA, 10V
Power - max338 mW
PackageCut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)22 kOhms
Resistor - emitter base (R2)22 kOhms
Vce saturation (Max) @ ib, ic250mV @ 300µA, 10mA