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onsemi MUN2116T1G — Discrete Semiconductors

onsemi MUN2116T1G

MPNMUN2116T1G
Active
$0.0244Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

MUN2116T1G specifications
ParameterValue
MountingSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce160 @ 5mA, 10V
Power - max230 mW
PackageTape & Reel (TR)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)4.7 kOhms
Vce saturation (Max) @ ib, ic250mV @ 1mA, 10mA