MMUN2232LT1G

onsemi

TRANS PREBIAS NPN 50V SOT23-3

onsemi MMUN2232LT1G
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MOQ 20 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

MMUN2232LT1G specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce15 @ 5mA, 10V
Power - max246 mW
PackageTape & Reel (TR) Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)4.7 kOhms
Resistor - emitter base (R2)4.7 kOhms
Vce saturation (Max) @ ib, ic250mV @ 1mA, 10mA
MMUN2232LT1G
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