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onsemi MMUN2217LT1G — Discrete Semiconductors

onsemi MMUN2217LT1G

MPNMMUN2217LT1G
Active
$0.1400Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

MMUN2217LT1G specifications
ParameterValue
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce35 @ 5mA, 10V
Power - max246 mW
PackageTape & Reel (TR) Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)4.7 kOhms
Resistor - emitter base (R2)10 kOhms
Vce saturation (Max) @ ib, ic250mV @ 1mA, 10mA