MMUN2131LT1G

onsemi

onsemi MMUN2131LT1G
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[IN STOCK] In Stock: 2 pcs
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MOQ 2 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

MMUN2131LT1G specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce8 @ 5mA, 10V
Power - max246 mW
PackageTape & Reel (TR) Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)2.2 kOhms
Resistor - emitter base (R2)2.2 kOhms
Vce saturation (Max) @ ib, ic250mV @ 5mA, 10mA
MMUN2131LT1G
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