JFET for analog switching and front-end stages
The MMBFU310LT1G is an N-Channel JFET from onsemi in a SOT-23-3 surface-mount package, rated for 25 V drain-to-source voltage (Vdss) and 225 mW maximum power dissipation. Its 24 mA Idss at Vds=10 V (Vgs=0) makes it suitable for analog switch, cascode amplifier, and constant-current source applications where a low-capacitance, high-impedance front end is needed.
Parametric profile and design margin
The 25 V breakdown voltage (V(BR)GSS) matches the Vdss rating, giving a clean 25 V operating ceiling. The gate-source cutoff voltage (VGS off) is 2.5 V at 1 nA drain current, which sets the pinch-off region for biasing in linear circuits. Input capacitance (Ciss) is a maximum of 5 pF at Vds=10 V, a low value that preserves bandwidth in RF or high-speed analog paths — the junction capacitance does not load the signal source significantly.
The SOT-23-3 package is widely used and readily sourced through multiple distribution channels.
