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onsemi MMBFU310LT1G — Circuit Protection
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RoHS Compliant · Lead-Free EIA-481 Standard
onsemi / Circuit Protection

MMBFU310LT1G N-Channel JFET 25V 225mW SOT-23-3 onsemi

MPN MMBFU310LT1G
End of Life Spot Stock · 24-48h Dispatch 100% Original Sealed

onsemi MMBFU310LT1G, N-Channel JFET, 25 V drain-to-source voltage, 24 mA Idss at Vds=10 V, 225 mW power dissipation, SOT-23-3 surface-mount package, active production, ROHS3 compliant.

In Stock: 512 pcs
MOQ: 5 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$0.28 / pc
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Volume Pricing Breaks Confirmed upon quotation
5+ pcs
$0.28
50+ pcs
$0.22
150+ pcs
$0.19
500+ pcs
$0.16
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$0.28 / ea · total $1.40

512 in stock — maximum per order · MOQ 5 · 3–4 days lead time

$0.22 / ea from 50 pcs
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100% Original Sealed 45x Microscope QC 30-Day Warranty · COC USD T/T & PI · DAP/DDP
[SPEC] Essential Parameters Snapshot Full Specifications (11)
Package / Case TO-236-3, SC-59, SOT-23-3
Output / Current 25 V

Full Technical Specifications

11 Parameters
MMBFU310LT1G specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage25 V
Voltage - breakdown (V(BR)GSS)25 V
Voltage - cutoff (VGS off) @ id2.5 V @ 1 nA
Current - drain (Idss) @ vds (Vgs=0)24 mA @ 10 V
Power - max225 mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Input capacitance (Ciss) (Max) @ vds5pF @ 10V (VGS)
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Technical Details & Description

JFET for analog switching and front-end stages

The MMBFU310LT1G is an N-Channel JFET from onsemi in a SOT-23-3 surface-mount package, rated for 25 V drain-to-source voltage (Vdss) and 225 mW maximum power dissipation. Its 24 mA Idss at Vds=10 V (Vgs=0) makes it suitable for analog switch, cascode amplifier, and constant-current source applications where a low-capacitance, high-impedance front end is needed.

Parametric profile and design margin

The 25 V breakdown voltage (V(BR)GSS) matches the Vdss rating, giving a clean 25 V operating ceiling. The gate-source cutoff voltage (VGS off) is 2.5 V at 1 nA drain current, which sets the pinch-off region for biasing in linear circuits. Input capacitance (Ciss) is a maximum of 5 pF at Vds=10 V, a low value that preserves bandwidth in RF or high-speed analog paths — the junction capacitance does not load the signal source significantly.

The SOT-23-3 package is widely used and readily sourced through multiple distribution channels.

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