MMBFJ177LT1G

onsemi

JFET P-CH 30V 0.225W SOT23-3

onsemi MMBFJ177LT1G
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

MMBFJ177LT1G specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Voltage - breakdown (V(BR)GSS)30 V
Voltage - cutoff (VGS off) @ id800 mV @ 10 nA
Current - drain (Idss) @ vds (Vgs=0)1.5 mA @ 15 V
Power - max225 mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Resistance - RDS300 Ohms
Input capacitance (Ciss) (Max) @ vds11pF @ 10V (VGS)
MMBFJ177LT1G
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