MJD45H11T4G

onsemi

TRANS PNP 80V 8A DPAK

onsemi MJD45H11T4G
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

MJD45H11T4G specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typePNP
Voltage - collector emitter breakdown80 V
Current - collector (Ic)8 A
Current - collector cutoff1µA
DC current gain (hFE) (Min) @ ic, vce40 @ 4A, 1V
Power - max1.75 W
Frequency - transition90MHz
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vce saturation (Max) @ ib, ic1V @ 400mA, 8A
MJD45H11T4G
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