MJD31T4G

onsemi

TRANS NPN 40V 3A DPAK

onsemi MJD31T4G
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

MJD31T4G specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown40 V
Current - collector (Ic)3 A
Current - collector cutoff50µA
DC current gain (hFE) (Min) @ ic, vce10 @ 3A, 4V
Power - max1.56 W
Frequency - transition3MHz
Operating temperature-65°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vce saturation (Max) @ ib, ic1.2V @ 375mA, 3A
MJD31T4G
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