MJD200T4G

onsemi

TRANS NPN 25V 5A DPAK

onsemi MJD200T4G
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

MJD200T4G specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown25 V
Current - collector (Ic)5 A
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce45 @ 2A, 1V
Power - max1.4 W
Frequency - transition65MHz
Operating temperature-65°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vce saturation (Max) @ ib, ic1.8V @ 1A, 5A
MJD200T4G
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