MJD112T4G

onsemi

TRANS NPN DARL 100V 2A DPAK

onsemi MJD112T4G
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[IN STOCK] In Stock: 1,218 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

MJD112T4G specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typeNPN - Darlington
Voltage - collector emitter breakdown100 V
Current - collector (Ic)2 A
Current - collector cutoff20µA
DC current gain (hFE) (Min) @ ic, vce1000 @ 2A, 3V
Power - max20 W
Frequency - transition25MHz
Operating temperature-65°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vce saturation (Max) @ ib, ic3V @ 40mA, 4A
MJD112T4G
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