MGSF2N02ELT1G

onsemi

MOSFET N-CH 20V 2.8A SOT23-3

onsemi MGSF2N02ELT1G
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MOQ 10 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

MGSF2N02ELT1G specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C2.8A (Ta)
Power dissipation1.25W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs85mOhm @ 3.6A, 4.5V
Gate charge (Qg) (Max) @ vgs3.5 nC @ 4 V
Input capacitance (Ciss) (Max) @ vds150 pF @ 5 V
MGSF2N02ELT1G
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