MCH6351-TL-W

onsemi

MOSFET P-CH 12V 9A 6MCPH

onsemi MCH6351-TL-W
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

MCH6351-TL-W specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage12 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C9A (Ta)
Power dissipation1.5W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±10V
TechnologyMOSFET (Metal Oxide)
Case6-SMD, Flat Leads
Rds on (Max) @ id, vgs16.9mOhm @ 4.5A, 4.5V
Gate charge (Qg) (Max) @ vgs20.5 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds2200 pF @ 6 V
MCH6351-TL-W
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