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onsemi ISL9N2357D3ST

onsemi ISL9N2357D3ST

MPNISL9N2357D3ST
End of Life

N-CHANNEL POWER MOSFET

$1.02Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesUltraFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

ISL9N2357D3ST specifications
ParameterValue
SeriesUltraFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C35A (Tc)
Power dissipation100W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs7mOhm @ 35A, 10V
Gate charge (Qg) (Max) @ vgs258 nC @ 20 V
Input capacitance (Ciss) (Max) @ vds5600 pF @ 25 V