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onsemi IRFS830B

onsemi IRFS830B

MPNIRFS830B
End of Life

N-CHANNEL POWER MOSFET

$0.25Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFS830B specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4.5A (Tj)
Power dissipation38W (Tj)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.5Ohm @ 2.25A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1050 pF @ 25 V