onsemi IRFM210BTF
MPNIRFM210BTF
End of Life
N-CHANNEL POWER MOSFET
$0.27Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
RoHSRoHS non-compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 770mA (Tc) |
| Power dissipation | 2W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 1.5Ohm @ 390mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 9.3 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 225 pF @ 25 V |