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onsemi HUF76609D3ST

onsemi HUF76609D3ST

MPNHUF76609D3ST
End of Life

MOSFET N-CH 100V 10A TO252AA

$1.01Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesUltraFET™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

HUF76609D3ST specifications
ParameterValue
SeriesUltraFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation49W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs160mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs16 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds425 pF @ 25 V