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onsemi HUF75945G3

onsemi HUF75945G3

MPNHUF75945G3
End of Life

N-CHANNEL POWER MOSFET

$2.31Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSRoHS non-compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

HUF75945G3 specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C38A (Tc)
Power dissipation310W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs71mOhm @ 38A, 10V
Gate charge (Qg) (Max) @ vgs280 nC @ 20 V
Input capacitance (Ciss) (Max) @ vds4023 pF @ 25 V