onsemi HGTP12N60A4D
MPNHGTP12N60A4D
End of Life
INSULATED GATE BIPOLAR TRANSISTO
$1.68Ref. price · indicative, final on quote
PackagingTO-220-3
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Input type | Standard |
| Mounting | Through Hole |
| Voltage - collector emitter breakdown | 600 V |
| Current - collector (Ic) | 54 A |
| Current - collector pulsed | 96 A |
| Power - max | 167 W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Gate charge | 78 nC |
| Case | TO-220-3 |
| Test condition | 390V, 12A, 10Ohm, 15V |
| Switching energy | 55µJ (on), 50µJ (off) |
| Td (on/off) @ 25°C | 17ns/96ns |
| Vce(on) (Max) @ vge, ic | 2.7V @ 15V, 12A |
| Reverse recovery time | 30 ns |