HGTD1N120BNS9A
onsemi
IGBT 1200V 5.3A 60W TO252AA
[IN STOCK] In Stock: 9,051 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| IGBT type | NPT |
| Input type | Standard |
| Mounting | Surface Mount |
| Voltage - collector emitter breakdown | 1200 V |
| Current - collector (Ic) | 5.3 A |
| Current - collector pulsed | 6 A |
| Power - max | 60 W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Gate charge | 14 nC |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Test condition | 960V, 1A, 82Ohm, 15V |
| Switching energy | 70µJ (on), 90µJ (off) |
| Td (on/off) @ 25°C | 15ns/67ns |
| Vce(on) (Max) @ vge, ic | 2.9V @ 15V, 1A |
HGTD1N120BNS9A
[ALLOC] verified