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onsemi HGTD1N120BNS9A

onsemi HGTD1N120BNS9A

MPNHGTD1N120BNS9A
End of Life

IGBT 1200V 5.3A 60W TO252AA

$1.68Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

HGTD1N120BNS9A specifications
ParameterValue
IGBT typeNPT
Input typeStandard
MountingSurface Mount
Voltage - collector emitter breakdown1200 V
Current - collector (Ic)5.3 A
Current - collector pulsed6 A
Power - max60 W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Gate charge14 nC
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Test condition960V, 1A, 82Ohm, 15V
Switching energy70µJ (on), 90µJ (off)
Td (on/off) @ 25°C15ns/67ns
Vce(on) (Max) @ vge, ic2.9V @ 15V, 1A