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HGT1S12N60A4DS

onsemi HGT1S12N60A4DS

MPNHGT1S12N60A4DS
End of Life

IGBT, 54A, 600V, N-CHANNEL, TO-2

$3.43Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

HGT1S12N60A4DS specifications
ParameterValue
Input typeStandard
MountingSurface Mount
Voltage - collector emitter breakdown600 V
Current - collector (Ic)54 A
Current - collector pulsed96 A
Power - max167 W
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Gate charge120 nC
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Test condition390V, 12A, 10Ohm, 15V
Switching energy55µJ (on), 50µJ (off)
Td (on/off) @ 25°C17ns/96ns
Vce(on) (Max) @ vge, ic2.7V @ 15V, 12A
Reverse recovery time30 ns