4170Vrms isolation with MOSFET output
Rated for 4170Vrms isolation, the H11F1VM provides galvanic separation between a DC input and a MOSFET output — suited for switching low-voltage DC loads up to 30V in industrial control or instrumentation where ground loops must be broken. The photo FET output switches with typical turn-on and turn-off times of 45µs each, making it appropriate for moderate-speed signal isolation rather than high-frequency PWM.
Through-hole 6-DIP package and thermal range
Housed in a 6-DIP (0.300", 7.62mm) through-hole package, the H11F1VM mounts directly into a standard DIP socket or solders into a PCB — the 6-DIP footprint is common across many optoisolator families, easing board layout.