onsemi has marked the H11A13S as Obsolete.
Isolation and switching parametrics
Rated for 5300 Vrms isolation — this is the 1-minute hipot withstand between input and output, typical for reinforced insulation in mains-isolated control circuits. The 50% minimum current transfer ratio at 10 mA forward current defines the LED drive margin: at 10 mA If, the output transistor must sink at least 5 mA collector current to guarantee logic-level switching. Typical turn-on and turn-off times are both 2 µs, placing the H11A13S in the medium-speed band for a phototransistor optocoupler — adequate for 100 kHz serial data or 50 kHz PWM feedback, but not for high-speed isolated comms like I²C or CAN. The 30 V maximum collector-emitter voltage suits 5 V and 12 V logic rails, with headroom for 24 V industrial signals. Operating temperature spans -55°C to +100°C, covering industrial and extended-temperature environments. The 1.18 V typical forward voltage and 100 mA absolute-maximum DC forward current are standard for a GaAs IR LED die.
Supplied in a 6-SMD Gull Wing package with a surface-mount footprint. The 6-SMD supplier device package has a 7.62 mm body width and 1.27 mm lead pitch — the same footprint as the industry-standard DIP-6 Gull Wing, so a single PCB land pattern serves multiple second-source optocouplers. Shipped in tube.