onsemi FQT4N20LTF
MPNFQT4N20LTF
End of Life
MOSFET N-CH 200V 850MA SOT223-4
$0.78Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
RoHSROHS3 Compliant
SeriesQFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | QFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 5V, 10V |
| Current - continuous drain (Id) @ 25°C | 850mA (Tc) |
| Power dissipation | 2.2W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 1.35Ohm @ 425mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 5.2 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 310 pF @ 25 V |