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onsemi FQS4900TF

onsemi FQS4900TF

MPNFQS4900TF
End of Life

POWER FIELD-EFFECT TRANSISTOR, 1

$0.54Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
SeriesQFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQS4900TF specifications
ParameterValue
SeriesQFET®
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage60V, 300V
Current - continuous drain (Id) @ 25°C1.3A, 300mA
Power - max2W
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
FET featureStandard
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1.95V @ 20mA
Rds on (Max) @ id, vgs550mOhm @ 650mA, 10V
Gate charge (Qg) (Max) @ vgs2.1nC @ 5V