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onsemi FQPF9N25C

onsemi FQPF9N25C

MPNFQPF9N25C
End of Life

POWER FIELD-EFFECT TRANSISTOR, 8

$0.56Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
SeriesQFET®
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQPF9N25C specifications
ParameterValue
SeriesQFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8.8A (Tc)
Power dissipation38W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs430mOhm @ 4.4A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds710 pF @ 25 V