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onsemi FQPF33N10L

onsemi FQPF33N10L

MPNFQPF33N10L
End of Life

POWER FIELD-EFFECT TRANSISTOR, 1

$0.71Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
SeriesQFET®
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQPF33N10L specifications
ParameterValue
SeriesQFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation41W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs52mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs40 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds1630 pF @ 25 V