FQP50N06
onsemi
[IN STOCK] In Stock: 20 pcs
MOQ 5 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | QFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 50A (Tc) |
| Power dissipation | 120W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 22mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 41 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1540 pF @ 25 V |
FQP50N06
[ALLOC] verified