onsemi FQP4N80

MPN FQP4N80

End of Life Spot Stock · 24-48h Dispatch 100% Original Sealed

POWER FIELD-EFFECT TRANSISTOR, 3

In Stock: 5,225 pcs

Ready for Immediate Dispatch (24-48h)

MOQ: 1 pcs Bulk

Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)

Dispatch: Shenzhen / HK

Unit Price (USD)

$0.91 / pc

Direct Purchase Ready

Volume Pricing Breaks Confirmed upon quotation

1+ pcs

$0.91

10+ pcs

$0.82

30+ pcs

$0.75

100+ pcs

$0.67

500+ pcs

$0.63

1,000+ pcs

$0.59

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$0.91 / ea

5,225 in stock — maximum per order · 3–4 days lead time

$0.82 / ea from 10 pcs

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100% Original Sealed 45x Microscope QC 30-Day Warranty · COC USD T/T & PI · DAP/DDP

[SPEC] Essential Parameters Snapshot Full Specifications (16)

Package / Case TO-220-3

Output / Current 800 V

Full Technical Specifications

16 Parameters

FQP4N80 specifications
Parameter / Attribute	Specification / Value
Series	QFET®
FET type	N-Channel
Mounting	Through Hole
Drain to source voltage	800 V
Drive voltage (Max rds on, min rds on)	10V
Current - continuous drain (Id) @ 25°C	3.9A (Tc)
Power dissipation	130W (Tc)
Operating temperature	-55°C ~ 150°C (TJ)
Package	Bulk
Vgs	±30V
Technology	MOSFET (Metal Oxide)
Case	TO-220-3
Vgs(th) (Max) @ id	5V @ 250µA
Rds on (Max) @ id, vgs	3.6Ohm @ 1.95A, 10V
Gate charge (Qg) (Max) @ vgs	25 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds	880 pF @ 25 V

Series Sibling Variants

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FQA32N20C

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