Skip to main content
onsemi FQP4N50 — Discrete Semiconductors

onsemi FQP4N50

MPNFQP4N50
End of Life

3.4A, 500V, 2.7OHM, N-CHANNEL MO

$0.27Ref. price · indicative, final on quote
PackagingTO-220-3
SeriesQFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQP4N50 specifications
ParameterValue
SeriesQFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3.4A (Tc)
Power dissipation70W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs2.7Ohm @ 1.7A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds460 pF @ 25 V