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onsemi FQP30N06L — Discrete Semiconductors

onsemi FQP30N06L

MPNFQP30N06L
Obsolete
$1.5600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQP30N06L specifications
ParameterValue
SeriesQFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C32A (Tc)
Power dissipation79W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs35mOhm @ 16A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds1040 pF @ 25 V