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onsemi FQI4N80TU

onsemi FQI4N80TU

MPNFQI4N80TU
End of Life

MOSFET N-CH 800V 3.9A I2PAK

$0.97Ref. price · indicative, final on quote
PackagingTO-262-3 Long Leads, I²Pak, TO-262AA
SeriesQFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQI4N80TU specifications
ParameterValue
SeriesQFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3.9A (Tc)
Power dissipation3.13W (Ta), 130W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs3.6Ohm @ 1.95A, 10V
Gate charge (Qg) (Max) @ vgs25 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds880 pF @ 25 V