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onsemi FQI17P10TU

onsemi FQI17P10TU

MPNFQI17P10TU
End of Life

P-CHANNEL POWER MOSFET

$0.51Ref. price · indicative, final on quote
PackagingTO-262-3 Long Leads, I²Pak, TO-262AA
RoHSRoHS non-compliant
SeriesQFET™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQI17P10TU specifications
ParameterValue
SeriesQFET™
FET typeP-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C16.5A (Tc)
Power dissipation3.75W (Ta), 100W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs190mOhm @ 8.25A, 10V
Gate charge (Qg) (Max) @ vgs39 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1100 pF @ 25 V