FQD7N20LTM
onsemi · QFET® Series
MOSFET N-CH 200V 5.5A DPAK
[IN STOCK] In Stock: 9 pcs
MOQ 1 · Bulk · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | QFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 5V, 10V |
| Current - continuous drain (Id) @ 25°C | 5.5A (Tc) |
| Power dissipation | 2.5W (Ta), 45W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 750mOhm @ 2.75A, 10V |
| Gate charge (Qg) (Max) @ vgs | 9 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 500 pF @ 25 V |
FQD7N20LTM
[ALLOC] verified