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onsemi FQB7N20TM — Discrete Semiconductors

onsemi FQB7N20TM

MPNFQB7N20TM
Obsolete
$1.1100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQB7N20TM specifications
ParameterValue
SeriesQFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6.6A (Tc)
Power dissipation3.13W (Ta), 63W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs690mOhm @ 3.3A, 10V
Gate charge (Qg) (Max) @ vgs10 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds400 pF @ 25 V