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onsemi FQB6N90TM_AM002 — Discrete Semiconductors

onsemi FQB6N90TM_AM002

MPNFQB6N90TM_AM002
Obsolete
$3.0700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQB6N90TM_AM002 specifications
ParameterValue
SeriesQFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5.8A (Tc)
Power dissipation3.13W (Ta), 167W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs1.9Ohm @ 2.9A, 10V
Gate charge (Qg) (Max) @ vgs52 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1880 pF @ 25 V