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onsemi FQB5N50CFTM — Discrete Semiconductors

onsemi FQB5N50CFTM

MPNFQB5N50CFTM
Obsolete
$2.1200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQB5N50CFTM specifications
ParameterValue
SeriesFRFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5A (Tc)
Power dissipation96W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageCut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.55Ohm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs24 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds625 pF @ 25 V