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onsemi FQB3N25TM — Discrete Semiconductors

onsemi FQB3N25TM

MPNFQB3N25TM
Obsolete
$1.5000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQB3N25TM specifications
ParameterValue
SeriesQFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2.8A (Tc)
Power dissipation3.13W (Ta), 45W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs2.2Ohm @ 1.4A, 10V
Gate charge (Qg) (Max) @ vgs5.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds170 pF @ 25 V