Skip to main content
onsemi FQB34N20LTM — Discrete Semiconductors

onsemi FQB34N20LTM

MPNFQB34N20LTM
Last Buy
$3.4500Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQB34N20LTM specifications
ParameterValue
SeriesQFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C31A (Tc)
Power dissipation3.13W (Ta), 180W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs75mOhm @ 15.5A, 10V
Gate charge (Qg) (Max) @ vgs72 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds3900 pF @ 25 V