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onsemi FQB33N10LTM — Discrete Semiconductors

onsemi FQB33N10LTM

MPNFQB33N10LTM
Obsolete
$0.9349Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQB33N10LTM specifications
ParameterValue
SeriesQFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C33A (Tc)
Power dissipation3.75W (Ta), 127W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs52mOhm @ 16.5A, 10V
Gate charge (Qg) (Max) @ vgs40 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds1630 pF @ 25 V