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onsemi FQB30N06LTM — Discrete Semiconductors

onsemi FQB30N06LTM

MPNFQB30N06LTM
Obsolete
$1.3500Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQB30N06LTM specifications
ParameterValue
SeriesQFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C32A (Tc)
Power dissipation3.75W (Ta), 79W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs35mOhm @ 16A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds1040 pF @ 25 V