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onsemi FQB2P25TM — Discrete Semiconductors

onsemi FQB2P25TM

MPNFQB2P25TM
Obsolete
$0.3100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQB2P25TM specifications
ParameterValue
SeriesQFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2.3A (Tc)
Power dissipation3.13W (Ta), 52W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs4Ohm @ 1.15A, 10V
Gate charge (Qg) (Max) @ vgs8.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds250 pF @ 25 V