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onsemi FQB27P06TM — Discrete Semiconductors

onsemi FQB27P06TM

MPNFQB27P06TM
Active

MOSFET P-CH 60V 27A D2PAK

$1.9700Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesQFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQB27P06TM specifications
ParameterValue
SeriesQFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C27A (Tc)
Power dissipation3.75W (Ta), 120W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs70mOhm @ 13.5A, 10V
Gate charge (Qg) (Max) @ vgs43 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1400 pF @ 25 V