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onsemi FQB25N33TM-F085 — Discrete Semiconductors

onsemi FQB25N33TM-F085

MPNFQB25N33TM-F085
Obsolete
$4.2829Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQB25N33TM-F085 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage330 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C25A (Tc)
Power dissipation3.1W (Ta), 250W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs230mOhm @ 12.5A, 10V
Gate charge (Qg) (Max) @ vgs75 nC @ 15 V
Input capacitance (Ciss) (Max) @ vds2010 pF @ 25 V