FQB22P10TM

onsemi

onsemi FQB22P10TM
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[IN STOCK] In Stock: 568 pcs
$1.27/ pc

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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

FQB22P10TM specifications
Parameter / AttributeSpecification / Value
SeriesQFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C22A (Tc)
Power dissipation3.75W (Ta), 125W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs125mOhm @ 11A, 10V
Gate charge (Qg) (Max) @ vgs50 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1500 pF @ 25 V
FQB22P10TM
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