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onsemi FQB19N20LTM — Discrete Semiconductors

onsemi FQB19N20LTM

MPNFQB19N20LTM
Active
$1.7900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQB19N20LTM specifications
ParameterValue
SeriesQFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C21A (Tc)
Power dissipation3.13W (Ta), 140W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs140mOhm @ 10.5A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds2200 pF @ 25 V